| PART |
Description |
Maker |
| ZXTN04120HK ZXTN04120HKTC ZXTN04120HK-15 |
Discrete - Bipolar Transistors - Darlington Transistors
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252
|
Diodes Incorporated
|
| ZXTN04120HP5 ZXTN04120HP5TC ZXTN04120HP5-15 |
Discrete - Bipolar Transistors - Darlington Transistors
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN POWERDI?5
|
Diodes Incorporated
|
| PTC943 PTC10000 PTC10000P PTC10001 PTC10001P PTC10 |
NPN Darlington Transistors NPN达林顿晶体管
VARISTOR RING 21.8V 8.5MM 3-TERM
NPN Darlington Transistors TO-204MA
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| BCP49 BCP29 |
Darlington Transistors - NPN Silicon Darlington Transistor for general AF applications
NPN Silicon Darlington Transistors
|
INFINEON[Infineon Technologies AG]
|
| 2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
| BDW83C02 BDW84C |
HIGH CURRENT SILICON POWER DARLINGTON TRANSISTORS
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
ST Microelectronics
STMicroelectronics
|
| 2SB1183 2SB1239 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Darlington connection for high DC current gain.
|
ROHM[Rohm]
|
| 2N666705 2N6668G 2N6667G |
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W
|
ON Semiconductor
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
